Apparatuses, systems, and methods for ion traps are described herein. One apparatus includes a number of microwave (MW) rails and a number of radio frequency (RF) rails formed with substantially parallel longitudinal axes and with substantially coplanar upper surfaces. The apparatus includes two sequences of direct current (DC) electrodes with each sequence formed to extend substantially parallel to the substantially parallel longitudinal axes of the MW rails and the RF rails. The apparatus further includes a number of through-silicon vias (TSVs) formed through a substrate of the ion trap and a trench capacitor formed in the substrate around at least one TSV.
Claim CLM-00001. 1. A method of forming an ion trap apparatus, comprising:
forming a number of microwave (MW) rails and a number of radio frequency (RF) rails with substantially parallel longitudinal axes and with substantially coplanar upper surfaces; forming two sequences of direct current (DC) electrodes with each sequence extending substantially parallel to the substantially parallel longitudinal axes of the MW rails and the RF rails; and forming a number of through-silicon vias (TSVs) through a substrate of the ion trap; and forming a trench capacitor in the substrate around at least one TSV to provide an electrical potential to the two sequences of DC electrodes.
