Patent US9916957

Apparatuses, systems, and methods for ion traps
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US9916957

1. A method of forming an ion trap, comprising: (5) (5)

forming a plurality of trenches below a surface of a substrate, wherein each trench extends from an end of an ion trap die through an ion trap region and each trench extends beyond the ion trap region;

partially filling a lower portion of the plurality of trenches with a first conductive material to operate as output lines for microwave (MW) current that has traveled beyond the ion trap region;

forming a dielectric material above the first conductive material;

forming a via through the dielectric material proximate to a trench beyond the ion trap region; and

forming a plurality of conducting lines above the first conductive material and starting above the substrate at the end of the ion trap die, the plurality of conducting lines configured to receive a current oscillating at a MW frequency.

2. The method of claim 1, further comprising: (1) (1)

separately connecting the plurality of conducting lines through a second conductive material to an upper surface of the substrate such that the second conductive material fills a remaining upper portion of the plurality of trenches to operate as input lines for the MW current to the ion trap region.

5. The method of claim 2, further comprising: (1) (1)

3. The method of claim 1, further comprising: (1) (1)

7. The method of claim 1, further comprising: (0) (2)

8. The method of claim 1, further comprising: (0) (1)

9. The method of claim 1, further comprising: (0) (1)

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Patent US9916957

Apparatuses, systems, and methods for ion traps

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