| Abstract: |
The present invention provides an matter-wave transistor in which the flow of particles (e.g., atoms and molecules) through the transistor is a result of resonant tunneling from a source well, through a gate well and into a drain well (as opposed to being a result of collisions, as in a classical atomtronic transistor). The transistor current of matter-wave particles can be controlled as a function of the breadth of resonant tunneling conditions of the gate well. For example, the resonant tunneling conditions of a gate well that does not include a dipole-oscillating Bose-Einstein condensate (DOBEC) can be broadened by including a DOBEC in the gate well. Similarly, the breadth of resonant tunneling conditions of the gate well can be changed by changing the particle population of a DOBEC in the gate well. |
| Inventor: |
ANDERSON, Dana Zachary (Boulder, CO, US); Dinardo, Brad Anthony (Boulder, CO, US) |
| Applicant: |
ColdQuanta, Inc. (Boulder, CO, US) |
| Face Assignee: |
N/A |
| Filed: |
2019-11-18 |
| Issued: |
2020-05-21 |
| Claims: |
20 |
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US20200161446
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1. A quantum tunneling matter-wave transistor process comprising:
(6)
(2)
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9. A quantum tunneling matter-wave transistor comprising a source well, a source-gate barrier, a gate well, a gate-drain barrier, and a drain well, the matterwave transistor having first and second states, the first state being characterized by resonant tunneling conditions of the gate well having a first breadth, the second state being characterized by resonant tunneling conditions of the gate well having a second breadth, such that a source-to-drain matterwave current of ultracold particles tunneling through the source-gate barrier and the gate-drain barrier can be changed by switching between the first state and the second state.
(6)
(0)
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17. A qubit array reparation process comprising:
(0)
(3)
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19. A qubit array reparation system including:
(1)
(3)
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