Abstract: |
An OR-gate device includes two cross shaped structures, each cross shaped structure includes a channel. Where at an end of each channel is an ohmic contact connecting the two cross shaped structures. Each cross shaped structure includes an epitaxial layer including a III-N heterostructure such as InAlN/GaN. Wherein an amount of an In concentration of the InAlN/GaN is tuned to lattice match with GaN, resulting in electron mobility to generate ballistic electrons. A fin structure located in the channel includes a gate formed transversely to a longitudinal axis of the channel. The gate is controlled using a voltage over the fin structure. Wherein the fin structure is formed to induce an energy-field structure that shifts by an amount of the voltage to control an opening of the gate that the flow of ballistic electrons is passing through, which in turn changes a depletion width, subjecting the ballistic electrons to interference. |
Inventor: |
Teo, koon Hoo (Lexington, MA, US); Chowdhurry, Nadim (Cambridge, MA, US) |
Applicant: |
Mitsubishi Electric Research Laboratories, Inc. (Cambridge, MA, US) |
Face Assignee: |
Mitsubishi Electric Research Laboratories, Inc. (Cambridge, MA, US) |
Filed: |
2020-03-04 |
Issued: |
2021-07-06 |
Claims: |
15 |
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US11056583
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1. An OR-gate device comprising:
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2. An OR-gate device comprising:
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3. An OR-gate device includes two cross shaped structures, each cross shaped structure includes a first arm, a second arm and a third arm, such that a channel from the first and second arms extends to a channel of the third arm, and when a current from a first voltage is flowing from a first electrode of the first arm to a second electrode of the second arm, a flow of ballistic electrons are generated that flow through the third arm channel from the channel of the first and second arms to the third arm channel, comprising:
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11. An OR-gate device comprising:
(3)
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15. An OR-gate device comprising:
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(5)
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