Patent US10546734

Apparatuses, systems, and methods for ion traps
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US10546734

1. A method of forming an ion trap system, comprising: (5) (4)

forming three sequential planar conductive materials above a substrate material, wherein: a first planar conductive material forms a ground plane;

a second planar conductive material forms a signal routing plane; and

a third planar conductive material forms a ground connection plane;

forming a number of longitudinal gaps in the second planar conductive material to separate two longitudinal sequences of direct current (DC) electrodes from at least two separate longitudinal radio frequency (RF) rails positioned between the two sequences of DC electrodes;

forming a first number of through-silicon vias (TSVs) through the substrate material; and

forming a first number of trench capacitors in the substrate material around at least one of the first number of TSVs to provide an electrical potential to each DC electrode of the two longitudinal sequences of DC electrodes.

2. The method of claim 1, further comprising: (0) (1)

3. The method of claim 1, further comprising: (0) (1)

4. The method of claim 1, further comprising: (0) (1)

5. The method of claim 1, further comprising: (1) (3)

forming a second number of TSVs through the substrate material;

connecting the second number of TSVs to the second planar conductive material; and

forming a second number of trench capacitors in the substrate material around at least one of the second number of TSVs.

6. The method of claim 5, wherein the second number of TSVs are formed longitudinally proximate to at least one DC electrode at longitudinal ends of the sequences of DC electrodes. (0)

7. The method of claim 1, wherein the method further includes providing the electrical potential from a source of electrical potential. (4) (0)

8. The method of claim 7, wherein the source of electrical potential is connected to the first number of TSVs. (1) (0)

10. The method of claim 7, wherein the source of electrical potential is connected to at least one trench capacitor of the first number of trench capacitors. (0)

11. The method of claim 7, wherein the source of electrical potential is an interposer. (2) (0)

13. The method of claim 7, further comprising forming the first number of trench capacitors with a certain capacitance such that the first number of TSVs reduces an amount of unintended variation in an electrical potential provided by the source of electrical potential. (0)

15. An ion trap system, comprising: (3) (6)

three sequential planar conductive materials above a substrate material, wherein: a first planar conductive material forms a ground plane;

a second planar conductive material forms a signal routing plane; and

a third planar conductive material forms a ground connection plane;

a number of longitudinal gaps in the second planar conductive material, wherein the number of longitudinal gaps separate two longitudinal sequences of direct current (DC) electrodes from at least two separate longitudinal radio frequency (RF) rails positioned between the two sequences of DC electrodes;

a first number of through-silicon vias (TSVs) through the substrate material; and

a first number of trench capacitors formed in the substrate material around at least one of the first number of TSVs to provide an electrical potential to each DC electrode of the two longitudinal sequences of DC electrodes;

a second number of through-silicon vias (TSVs) formed through the substrate material and connected to a number of DC rotate rails; and

a second number of trench capacitors formed in the substrate material around at least one of the first number of TSVs to provide an electrical potential to each DC rotate rail of the number of DC rotate rails.

16. The system of claim 15, wherein the second number of TSVs is connected to the number of DC rotate rails through a number of vias. (1) (0)

19. The system of claim 15, wherein each of the number of DC rotate rails is configured to carry a static DC current. (0)

20. The system of claim 15, wherein the electrical potential is provided from a source of electrical potential connected to the number of TSVs. (0)

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Patent US10546734

Apparatuses, systems, and methods for ion traps

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