Abstract: |
A capacitive coupling device (superconducting C-coupler) includes a trench formed through a substrate, from a backside of the substrate, reaching a depth in the substrate, substantially orthogonal to a plane of fabrication on a frontside of the substrate, the depth being less than a thickness of the substrate. A superconducting material is deposited as a continuous conducting via layer in the trench with a space between surfaces of the via layer in the trench remaining accessible from the backside. A superconducting pad is formed on the frontside, the superconducting pad coupling with a quantum logic circuit element fabricated on the frontside. An extension of the via layer is formed on the backside. The extension couples to a quantum readout circuit element fabricated on the backside. |
Inventor: |
Hertzberg, Jared Barney (Ossining, NY, US); Rosenblatt, Sami (White Plains, NY, US); Topaloglu, Rasit O. (Poughkeepsie, NY, US) |
Applicant: |
International Business Machines Corporation (Armonk, NY, US) |
Face Assignee: |
INTERNATIONAL BUSINESS MACHINES CORPORATION (Armonk, NY, US) |
Filed: |
2017-11-27 |
Issued: |
2019-10-15 |
Claims: |
20 |
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US10446736
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1. A capacitive coupling device (superconducting C-coupler) comprising:
(6)
(4)
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11. A method comprising:
(6)
(4)
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