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Patent US9916957
Issued 2018-03-13
Apparatuses, Systems, And Methods For Ion Traps
Apparatuses, systems, and methods for ion traps are described herein. One apparatus includes a number of microwave (MW) rails and a number of radio frequency (RF) rails formed with substantially parallel longitudinal axes and with substantially coplanar upper surfaces. The apparatus includes two sequences of direct current (DC) electrodes with each sequence formed to extend substantially parallel to the substantially parallel longitudinal axes of the MW rails and the RF rails. The apparatus further includes a number of through-silicon vias (TSVs) formed through a substrate of the ion trap and a trench capacitor formed in the substrate around at least one TSV.
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- 1. A method of forming an ion trap, comprising:
forming a plurality of trenches below a surface of a substrate, wherein each trench extends from an end of an ion trap die through an ion trap region and each trench extends beyond the ion trap region; partially filling a lower portion of the plurality of trenches with a first conductive material to operate as output lines for microwave (MW) current that has traveled beyond the ion trap region; forming a dielectric material above the first conductive material; forming a via through the dielectric material proximate to a trench beyond the ion trap region; and forming a plurality of conducting lines above the first conductive material and starting above the substrate at the end of the ion trap die, the plurality of conducting lines configured to receive a current oscillating at a MW frequency.
