Search All Applications in Quantum Computing
Application US20200161446
Published 2020-05-21
Quantum Tunneling Matter-wave Transistor System
The present invention provides an matter-wave transistor in which the flow of particles (e.g., atoms and molecules) through the transistor is a result of resonant tunneling from a source well, through a gate well and into a drain well (as opposed to being a result of collisions, as in a classical atomtronic transistor). The transistor current of matter-wave particles can be controlled as a function of the breadth of resonant tunneling conditions of the gate well. For example, the resonant tunneling conditions of a gate well that does not include a dipole-oscillating Bose-Einstein condensate (DOBEC) can be broadened by including a DOBEC in the gate well. Similarly, the breadth of resonant tunneling conditions of the gate well can be changed by changing the particle population of a DOBEC in the gate well.
Much More than Average Length Specification
View the Patent Matrix® Diagram to Explore the Claim Relationships
USPTO Full Text Publication >
- 1. A quantum tunneling matter-wave transistor process comprising:
causing a source well of a matter-wave transistor to be populated with matter-wave particles, the matterwave transistor including a source well, a source-gate barrier, a gate well, a gate-drain barrier, and a drain well; and changing the source-to-drain matterwave current tunneling through the source-gate barrier and the gate-drain barrier by changing resonant tunneling conditions of the gate well.
- 9. A quantum tunneling matter-wave transistor comprising a source well, a source-gate barrier, a gate well, a gate-drain barrier, and a drain well, the matterwave transistor having first and second states, the first state being characterized by resonant tunneling conditions of the gate well having a first breadth, the second state being characterized by resonant tunneling conditions of the gate well having a second breadth, such that a source-to-drain matterwave current of ultracold particles tunneling through the source-gate barrier and the gate-drain barrier can be changed by switching between the first state and the second state.
- 17. A qubit array reparation process comprising:
maintaining a reservoir of ultra-cold particles; determining whether or not qubit-array sites contain respective qubit particles, each qubit particle having a respective superposition state; and in response to a determination that a first qubit site does not contain a respective qubit particle, transporting an ultracold particle to the first qubit site to serve as a qubit particle contained by the first qubit site.
- 19. A qubit array reparation system including:
a reservoir of ultra-cold particles; a detector that determines whether or not qubit sites of a qubit array include respective qubit particles; and a transport system for transporting an ultra-cold particle to a first qubit array site that has been determined by the probe system to not include a qubit particle so that the ultra-cold particle can serve as a qubit particle for the first qubit array site.
