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Patent US10546734
Issued 2020-01-28
Apparatuses, Systems, And Methods For Ion Traps
Apparatuses, systems, and methods for ion traps are described herein. One apparatus includes a number of microwave (MW) rails and a number of radio frequency (RF) rails formed with substantially parallel longitudinal axes and with substantially coplanar upper surfaces. The apparatus includes two sequences of direct current (DC) electrodes with each sequence formed to extend substantially parallel to the substantially parallel longitudinal axes of the MW rails and the RF rails. The apparatus further includes a number of through-silicon vias (TSVs) formed through a substrate of the ion trap and a trench capacitor formed in the substrate around at least one TSV.
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- 1. A method of forming an ion trap system, comprising:
forming three sequential planar conductive materials above a substrate material, wherein:
a first planar conductive material forms a ground plane;
a second planar conductive material forms a signal routing plane; and
a third planar conductive material forms a ground connection plane;
forming a number of longitudinal gaps in the second planar conductive material to separate two longitudinal sequences of direct current (DC) electrodes from at least two separate longitudinal radio frequency (RF) rails positioned between the two sequences of DC electrodes; forming a first number of through-silicon vias (TSVs) through the substrate material; and forming a first number of trench capacitors in the substrate material around at least one of the first number of TSVs to provide an electrical potential to each DC electrode of the two longitudinal sequences of DC electrodes.
- 15. An ion trap system, comprising:
three sequential planar conductive materials above a substrate material, wherein:
a first planar conductive material forms a ground plane;
a second planar conductive material forms a signal routing plane; and
a third planar conductive material forms a ground connection plane;
a number of longitudinal gaps in the second planar conductive material, wherein the number of longitudinal gaps separate two longitudinal sequences of direct current (DC) electrodes from at least two separate longitudinal radio frequency (RF) rails positioned between the two sequences of DC electrodes; a first number of through-silicon vias (TSVs) through the substrate material; and a first number of trench capacitors formed in the substrate material around at least one of the first number of TSVs to provide an electrical potential to each DC electrode of the two longitudinal sequences of DC electrodes; a second number of through-silicon vias (TSVs) formed through the substrate material and connected to a number of DC rotate rails; and a second number of trench capacitors formed in the substrate material around at least one of the first number of TSVs to provide an electrical potential to each DC rotate rail of the number of DC rotate rails.
