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Patent US10445651
Issued 2019-10-15
Vertical Superconducting Capacitors For Transmon Qubits
A vertical q-capacitor includes a trench in a substrate through a layer of superconducting material. A superconductor is deposited in the trench forming a first film on a first surface, a second film on a second surface, and a third film of the superconductor on a third surface of the trench. The first and second surfaces are substantially parallel, and the third surface in the trench separates the first and second surfaces. A dielectric is exposed below the third film by etching. A first coupling is formed between the first film and a first contact, and a second coupling is formed between the second film and a second contact in a superconducting quantum logic circuit. The first and second couplings cause the first and second films to operate as the vertical q-capacitor that maintains integrity of data in the superconducting quantum logic circuit within a threshold level.
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- 1. A vertical q-capacitor comprising:
a superconducting material deposited in a trench that is substantially orthogonal to a plane of fabrication, wherein deposited superconducting material forms a first film of the superconducting material on a first surface of the trench, and a second film of the superconducting material on a second surface of the trench, wherein the second surface is substantially parallel to the first surface; a dielectric between the first film and the second film; a first coupling between the first film and a first contact in a superconducting quantum logic circuit; and a second coupling between the second film and a second contact in the superconducting quantum logic circuit, the first coupling and the second coupling causing the first film and the second film to operate as the vertical q-capacitor that maintains integrity of data in the superconducting quantum logic circuit within a threshold level.
- 9. A method comprising:
depositing a superconducting material in a trench that is substantially orthogonal to a plane of fabrication, wherein deposited superconducting material forms a first film of the superconducting material on a first surface of the trench, and a second film of the superconducting material on a second surface of the trench, wherein the second surface is substantially parallel to the first surface; exposing a dielectric material between the first film and the second film; and coupling the first film to a first contact in a superconducting quantum logic circuit and the second film to a second contact in the superconducting quantum logic circuit, the coupling causing the first film and the second film to operate as the vertical q-capacitor that maintains integrity of data in the superconducting quantum logic circuit within a threshold level.
- 17. A semiconductor fabrication system comprising a lithography component, the semiconductor fabrication system when operated to fabricate a semiconductor device performing operations comprising:
depositing a superconducting material in a trench that is substantially orthogonal to a plane of fabrication, wherein deposited superconducting material forms a first film of the superconducting material on a first surface of the trench, and a second film of the superconducting material on a second surface of the trench, wherein the second surface is substantially parallel to the first surface; exposing a dielectric material between the first film and the second film; and coupling the first film to a first contact in a superconducting quantum logic circuit and the second film to a second contact in the superconducting quantum logic circuit, the coupling causing the first film and the second film to operate as the vertical q-capacitor that maintains integrity of data in the superconducting quantum logic circuit within a threshold level.
